 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| WFF12N65 WFF N65 Silicon N-Channel MOSFET Features 12A,650V,RDS(on)(Max0.8)@VGS=10V Ultra-low Gate Charge(Typical 51.7nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem i 's adv an ce d planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for AC-DCswitching power supplies, DC-DCpower converters, high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100) IDM VGS EAS EAR dv/dt PD Derating Factor above 25 TJ, Tstg TL Junction and Storage Temperature 0.41 -55~150 300 W/ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25) (Note 2) (Note 1) (Note 3) (Note1) 30 990 22 4.5 51 A A V mJ mJ V/ns W Drain Source Voltage Continuous Drain Current(@Tc=25) Parameter Value 650 12 Units V A Channel Temperature Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Value Min - Typ - Max 2.45 62.5 Units /W /W /W Rev.A Oct.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. WFF12N65 WFF N65 Electrical Characteristics (Tc = 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source Qg plus gate-drain) Gate-source charge Gate-drain ("miller") Charge Qgs Qgd VGS = 10 V, nC ID = 12 A (Note4,5) 9.6 18.6 tf toff VDD = 520 V, 51.7 RG=25 (Note4,5) 310 54 - Symbol IGSS V(BR)GSS IDSS Test Condition VGS = 30 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 650 V, VGS = 0 V VDS = 480 V, Tc = 125 Min 30 650 2 - Type 0.64 6.4 1830 155 2.0 50 49 Max 100 10 100 4 0.8 - Unit nA V A A V V S V(BR)DSS VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton ID = 250 A, VGS = 0 V VDS = 10 V, ID =250 A VGS = 10 V, ID = 6A VDS = 50 V, ID = 6A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD =325 V, ID =12A pF ns Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 12 A, VGS = 0 V IDR = 12 A, VGS = 0 V, dIDR / dt = 100 A / s Min - Type 450 5.0 Max 12 48 1.4 - Un it A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=14mH,IAS=12A,VDD=95V,RG=25,Starting TJ=25 3.ISD12A,di/dt200A/us, VDD Steady, all for your advance WFF12N65 WFF N65 Fig.1 On-State Characteristics Fig.2 Transfer Current Characteristics Fig.3 On-Resistance variation vs Drain Current Fig.4 Body Diode Forward Voltage Variation with Source Current and Temperature Fig.8 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, all for your advance WFF12N65 WFF N65 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response curve 4/7 Steady, all for your advance WFF12N65 WFF N65 Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Uncamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance WFF12N65 WFF N65 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance WFF12N65 WFF N65 TO-220 Package Dimension Unit:mm 7/7 Steady, all for your advance |
Price & Availability of WFF12N65
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |